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www.irf.com 1 07/23/08 IRF9910PBF hexfet power mosfet notes through are on page 10 so-8 benefits very low r ds(on) at 4.5v v gs low gate charge fully characterized avalanche voltage and current 20v v gs max. gate rating applications dual so-8 mosfet for pol converters in desktop, servers, graphics cards, game consoles and set-top box lead-free
v dss i d 20v q1 13.4m @v gs = 10v 10a q2 9.3m @v gs = 10v 12a r ds(on) max absolute maximum ratin g s parameter q1 max. q2 max. units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v 10 12 i d @ t a = 70c continuous drain current, v gs @ 10v 8.3 9.9 a i dm pulsed drain current 83 98 p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 42 c/w r ja junction-to-ambient ??? 62.5 20 20 -55 to + 150 2.0 0.016 1.3

2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage q1&q2 20 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient q1 ??? 0.0061 ??? v/c q2 ??? 0.014 ??? q1 ??? 10.7 13.4 r ds(on) static drain-to-source on-resistance ??? 14.6 18.3 m ? q2 ??? 7.4 9.3 ??? 9.1 11.3 v gs ( th ) gate threshold voltage q1&q2 1.65 ??? 2.55 v ? v gs ( th ) / ? t j gate threshold volta g e coefficient q1 ??? -4.9 ??? mv/c q2 ??? -5.0 ??? i dss drain-to-source leakage current q1&q2 ??? ??? 1.0 a q1&q2 ??? ??? 100 i gss gate-to-source forward leakage q1&q2 ??? ??? 100 na gate-to-source reverse leakage q1&q2 ??? ??? -100 gfs forward transconductance q1 19 ??? ??? s q2 27 ??? ??? q g total gate charge q1 ??? 7.4 11 q2 ??? 15 23 q g s1 pre-vth gate-to-source charge q1 ??? 2.6 ??? q1 q2 ??? 4.3 ??? v ds = 10v q g s2 post-vth gate-to-source char g e q1 ??? 0.85 ??? nc v gs = 4.5v, i d = 8.3a q2 ??? 1.4 ??? q g d gate-to-drain charge q1 ??? 2.5 ??? q2 q2 ??? 5.4 ??? v ds = 10v q g odr gate charge overdrive q1 ??? 1.5 ??? v gs = 4.5v, i d = 9.8a q2 ??? 3.9 ??? q sw switch char g e ( q g s2 + q g d ) q1 ??? 3.4 ??? q2 ??? 6.8 ??? q oss output charge q1 ??? 4.0 ??? nc q2 ??? 8.7 ??? t d ( on ) turn-on delay time q1 ??? 6.3 ??? q2 ??? 8.3 ??? t r rise time q1 ??? 10 ??? i d = 8.3a q2 ??? 14 ??? ns t d ( off ) turn-off delay time q1 ??? 9.2 ??? q2 ??? 15 ??? t f fall time q1 ??? 4.5 ??? i d = 9.8a q2 ??? 7.5 ??? c iss in p ut ca p acitance q1 ??? 900 ??? q2 ??? 1860 ??? c oss output capacitance q1 ??? 290 ??? pf q2 ??? 600 ??? c rss reverse transfer capacitance q1 ??? 140 ??? q2 ??? 310 ??? avalanche characteristics parameter q1 max. q2 max. units e as single pulse avalanche energy 33 26 mj i ar avalanche current 8.3 9.8 a diode characteristics param eter min. typ. max. units i s continuous source current q1&q2 ??? ??? 2.5 a (body diode) i sm pulsed source current q1 ??? ??? 83 a (body diode) q2 ??? ??? 98 v sd diode forward voltage q1 ??? ??? 1.0 v q2 ??? ??? 1.0 t rr reverse recovery time q1 ??? 11 17 ns q2 ??? 16 24 q rr reverse recovery charge q1 ??? 3.1 4.7 nc q2 ??? 4.9 7.3 conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 10a mosfet symbol v ds = 10v, v gs = 0v q1 v gs = 20v v gs = -20v v ds = 16v, v gs = 0v conditions q2 q1 t j = 25c, i f = 8.3a, v dd = 10v, di/dt = 100a/s t j = 25c, i s = 8.3a, v gs = 0v showing the integral reverse p-n junction diode. t j = 25c, i s = 9.8a, v gs = 0v q2 t j = 25c, i f = 9.8a, v dd = 10v, di/dt = 100a/s v dd = 16v, v gs = 4.5v ??? v ds = 10v clamped inductive load v gs = 0v ? = 1.0mhz typ. ??? v gs = 4.5v, i d = 8.3a v gs = 4.5v, i d = 9.8a v ds = 10v, i d = 9.8a v dd = 16v, v gs = 4.5v v gs = 10v, i d = 12a v ds = v gs , i d = 250a v ds = 10v, i d = 8.3a v ds = 16v, v gs = 0v, t j = 125c
www.irf.com 3 fig 3 . typical output characteristics fig 1 . typical output characteristics fig 4 . typical output characteristics fig 5 . typical transfer characteristics fig 6 . typical transfer characteristics q1 - control fet q2 - synchronous fet typical characteristics fig 2 . typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 2.5v vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.8v bottom 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.8v bottom 2.5v 1 2 3 4 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 10v 60s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 2.5v vgs top 10v 8.0v 5.0v 4.5v 4.0v 3.5v 3.0v bottom 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 8.0v 5.0v 4.5v 4.0v 3.5v 3.0v bottom 2.5v 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 10v 60s pulse width
4 www.irf.com fig 7 . typical capacitance vs.drain-to-source voltage fig 8 . typical capacitance vs.drain-to-source voltage
fig. 9 . gate-to-source voltage vs typical gate charge fig. 10 . gate-to-source voltage vs typical gate charge
typical characteristics q1 - control fet q2 - synchronous fet 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec t a = 25c tj = 150c single pulse 0 5 10 15 20 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v i d = 9.8a 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 012345678910 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v i d = 8.3a 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec t a = 25c tj = 150c single pulse
www.irf.com 5 q1 - control fet q2 - synchronous fet typical characteristics fig 13 . normalized on-resistance fig 14 . normalized on-resistance fig 15. typical source-drain diode forward voltage ! ! -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 12a v gs = 10v 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0 1 10 100 i sd , reverse drain current (a) t j = 25c t j = 150c v gs = 0v 2 3 4 5 6 7 8 9 10 v gs, gate -to -source voltage (v) 0 5 10 15 20 25 r ds(on) , drain-to -source on resistance (m ? ) i d = 12a t j = 25c t j = 125c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 10a v gs = 10v 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0 1 10 100 i sd , reverse drain current (a) t j = 25c t j = 150c v gs = 0v 2 3 4 5 6 7 8 9 10 v gs, gate -to -source voltage (v) 0 5 10 15 20 25 30 35 40 r ds(on) , drain-to -source on resistance (m ? ) i d = 10a t j = 25c t j = 125c
6 www.irf.com fig 19. maximum drain current vs. ambient temperature fig 21. threshold voltage vs. temperature q1 - control fet q2 - synchronous fet typical characteristics fig 20. maximum drain current vs. ambient temperature fig 22. threshold voltage vs. temperature fig 23. maximum avalanche energy vs. drain current fig 24. maximum avalanche energy vs. drain current 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 12 14 i d , drain current (a) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v gs(th) gate threshold voltage (v) i d = 250a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e as , single pulse avalanche energy (mj) i d top 5.5a 6.2a bottom 9.8a 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 12 i d , drain current (a) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v gs(th) gate threshold voltage (v) i d = 250a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 e as , single pulse avalanche energy (mj) i d top 2.2a 2.6a bottom 8.3a
www.irf.com 7 fig 28. switching time test circuit fig 29. switching time waveforms d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 27. gate charge test circuit fig 26. unclamped inductive test circuit and waveform t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v vgs v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - v gs v ds 90% 10% t d(on) t d(off) t r t f fig 25. maximum effective transient thermal impedance, junction-to-ambient 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 1.688 0.000230 14.468 0.105807 30.264 1.001500 16.106 29.90000
8 www.irf.com fig 30. for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period "#
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fig 31. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
www.irf.com 9 so-8 package outline (mosfet & fetky)

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$%$ ! ! ! $$ & ! dimensions are shown in milimeters (inches) so-8 part marking information

note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
10 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, q1: l = 0.95mh r g = 25 ? , i as = 8.3a; q2: l = 0.54mh r g = 25 ? , i as = 9.8a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. & %&'( 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2008 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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